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- Carlberg, Patrick, et al.
(författare)
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Lift-off process for nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 67-8, s. 203-207
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Konferensbidrag (refereegranskat)abstract
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
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- Carlberg, Patrick, et al.
(författare)
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Nanoimprint in mr-L 6000.1 XP/PMMA resist system
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
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| 9. |
- Maximov, Ivan, et al.
(författare)
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Fabrication of Si-based nanoimprint stamps with sub-20 nm features
- 2002
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Ingår i: MICROELECTRONIC ENGINEERING. - 1873-5568 .- 0167-9317. ; 61-2, s. 449-454
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Konferensbidrag (refereegranskat)abstract
- We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V.
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- Montelius, Lars, et al.
(författare)
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Next generation nanotechnologies for sensor array fabrication
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- New emerging technologies such as nanoimprint lithography (NIL) offers the biosensor research community the possibility to fabricate low-cost biodevices having nanometer dimensions. Such nanosized devices can be applied as biosensors where new functions might emerge due to the nanoscale dimensions. In this paper we will discuss various nanolithography methods as well as the benefits of going to the nanoscale for biosensor applications. We will also show results from mixed NIL and UV-lithography for fabrication of interdigitated nanobiosensor electrodes on up to 6'' large Si wafers. The electrode and inter-electrode distances were 100 nm wide over a total area of 200 μm×200 μm. We will also show the obtained enhanced efficiency of redox-recycling when utilizing such nanoscaled biosensors
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